CBSE Class 12 Semiconductor Electronics Materials Devices and Simple Circuits Multiple Choice Questions with Answers. MCQ Questions Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers Is Prepared Based on Latest Exam Pattern. Students can solve NCERT Class 12 Semiconductor Electronics Materials Devices and Simple Circuits MCQs with Answers to know their preparation level.
Students who are searching for NCERT MCQ Questions for Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers are compiled here to get good practice on all fundamentals. Know your preparation level on MCQ Questions for Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers. You can also verify your answers from our provided MCQ Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers. So, ace up your preparation with MCQ of Class 12 Physics Examinations.
MCQ Questions Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers - Set - 1
Question 1:
The part of the transistor which is heavily doped to produce a large number of majority carriers is:
(a) emitter
(b) base
(c) collector
(d) none
Correct Answer – (A)
Question 2 :
In the common emitter amplifier, the phase difference between the input voltage and output voltage signal across the collector and emitter is:
(a) 0
(b) π/2
(c) π
(d) π/4
Correct Answer – (A)
Question 3 :
The Voltage gain is highest for
(a) common emitter amplifier
(b) common base amplifier
(c) common collector amplifier.
(d) Equal in all the three.
Correct Answer – (A)
Question 4 :
A hole in a p-type semiconductor is-
(a) an excess electron
(b) A missing atom
(c) A missing electron
(d) A donor level.
Correct Answer – (C)
Question 5 :
If the conductivity of a semiconductor is only due to break of the covalent band due to the thermal excitation, then the semiconductor is called:
(a) intrinsic
(b) extrinsic
(c) Acceptor
(d) none of these
Correct Answer – (A)
MCQ Questions Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers
Question 6 :
In common base amplifier, the phase difference between the input and output voltage signal is
(a) 0
(b) π/2
(c) π
(d) π/4
Correct Answer – (A)
Question 7 :
In an n-p-n transistor circuit the collector current is 18 mA. If 90% of the electrons emitted reach the collector, than the emitter current is:
(a) 1.6 mA
(b) 16.4 mA
(c) 18 mA
(d) 20 mA
Correct Answer – (C)
Question 8 :
The mobility of conduction electrons is greater than that of holes since electrons is greater than that of holes since electrons.
(a) are negatively charged.
(b) are lighter
(c) require smaller energy for moving through the crystal lattice.
(d) Undergo smaller number of collisions.
Correct Answer – (C)
Question 9 :
In a good conductor, the energy levels in a valence band:
(a) are partially filled only.
(b) overlap with conduction band only.
(c) both (a) and (b) are correct.
(d) none of these
Correct Answer – (C)
Question 10 :
In a semiconductor, the forbidden energy gap between the valence band and the conduction band is of the order of:
(a) 1 Mev
(b) 1 ev
(c) 0.1 Mev
(d) 5ev
Correct Answer – (B)
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