MCQ Questions Class 12 Semiconductor Electronics Materials Devices and Simple Circuits With Answers

CBSE Class 12 Semiconductor Electronics Materials Devices and Simple Circuits Multiple Choice Questions with Answers. MCQ Questions Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers Is Prepared Based on Latest Exam Pattern. Students can solve NCERT Class 12 Semiconductor Electronics Materials Devices and Simple Circuits MCQs with Answers to know their preparation level.

Students who are searching for NCERT MCQ Questions for Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers are compiled here to get good practice on all fundamentals. Know your preparation level on MCQ Questions for Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers. You can also verify your answers from our provided MCQ Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers. So, ace up your preparation with MCQ of Class 12 Physics Examinations.

MCQ Questions Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers - Set - 4

Question 1: 

In intrinsic semiconductor at room temperature, the number of electrons and holes are:
(a) equal
(b) unequal
(c) infinite
(d) zero

Correct Answer – (A)

Question 2 : 

On heating, resistance of semiconductors:
(a) decreases
(b) increases
(c) remains same
(d) first increases then decreases

Correct Answer – (A)

Question 3 : 

In semi conductor which are responsible for conduction:
(a) only electron
(b) electron and hole both
(c) only hole
(d) None of these

Correct Answer – (B)

Question 4 : 

In a common base amplifier the phase difference between the input signal voltage and output voltage is :
(a) π/2
(b) 0
(c) π/4
(d) π

Correct Answer – (B)

Question 5 : 

To obtain electrons as majority charge carriers in a semiconductors the impurity mixed is:
(a) monovalent
(b) divalent
(c) trivalent
(d) pentavalent

Correct Answer – (B)

MCQ Questions Class 12 Semiconductor Electronics Materials Devices and Simple Circuits with Answers

Question 6 : 

p-n junction diode can be used as:
(a) amplifier
(b) oscillator
(c) detector
(d) modulator

Correct Answer – (C)

Question 7 : 

In binary system III represents:
(a) 1
(b) 3
(c) 7
(d) 100

Correct Answer – (C)

Question 8 : 

Energy bands in solids are a consequence of:
(a) Ohm’s Law
(b) Pauli’s exclusion principle
(c) Bohr’s theory
(d) Heisenberg’s uncertainty principle

Correct Answer – (B)

Question 9 : 

In the middle of the depletion layer of a reverse biased p-n junction, the:
(a) electric field is zero
(b) potential is maximum
(c) electric field is maximum
(d) potential zero.

Correct Answer – (D)

Question 10 : 

For germanium crystal, the forbidden energy gap in joules
(a) 1.216 × 10-19
(b) 1.76 × 10-19
(c) 1.6 × 10-19
(d) zero

Correct Answer – (A)
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